收藏本站
NP60N03SUG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
MARKING INFORMATION
60N03
UG
Abbreviation of part number
Pb-free plating marking
Lot code
Reel side
RECOMMENDED SOLDERING CONDITIONS
The NP60N03SUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Partial heating
Soldering Conditions
Maximum temperature (Package's surface temperature): 260 ° C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220 ° C: 60 seconds or less
Preheating time at 160 to 180 ° C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350 ° C or below
Recommended
Condition Symbol
IR60-00-3
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19547EJ1V0DS
7
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP60N04KUG-E1-AY MOSFET N-CH 40V 60A TO-263
NP60N04MUG-S18-AY MOSFET N-CH 40V 60A TO-220
NP60N055KUG-E1-AY MOSFET N-CH 55V 60A TO-263
NP70N04MUG-S18-AY MOSFET N-CH 40V 70A TO-220
NP70N10KUF-E1-AY MOSFET N-CH 100V 70A TO-263
NP80N03KDE-E1-AY MOSFET N-CH 30V 80A TO-263
NP80N03MLE-S18-AY MOSFET N-CH 30V 80A TO-220
NP80N04MHE-S18-AY MOSFET N-CH 40V 80A TO-220
相关代理商/技术参数
NP60N04KUG-E1-AY 功能描述:MOSFET N-CH 40V 60A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP60N04MUG-S18-AY 功能描述:MOSFET N-CH 40V 60A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP60N04MUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04MUK-S18-AY 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 60A TO-220
NP60N04NUK-S18-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:POWER DEVICE E AUTOMOTIVE MOS MP-3ZP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 60A TO-252
NP60N04VUK-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR